Databook.fxp 1/13/99 2:09 PM Page F-32

F-32

01/99

NJ132 Process

Silicon Junction Field-Effect Transistor ¥ High Speed Switch ¥ Low-Noise Amplifier

G

Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts

S-D

10 mA +150°C – 65°C to +175°C

S-D

Devices in this Databook based on the NJ132 Process. Datasheet

Datasheet

2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A

2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113

G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate.

At 25°C free air temperature:

NJ132 Process

Static Electrical Characteristics Gate Source Breakdown Voltage

V(BR)GSS

Reverse Gate Leakage Current

IGSS

Drain Saturation Current (Pulsed)

IDSS

Gate Source Cutoff Voltage

VGS(OFF)

Min

Typ

– 30

– 45

Max

Unit

Test Conditions

V

IG = – 1 µA, VDS = ØV

– 100

pA

VGS = – 20V, VDS = ØV

10

150

mA

VDS = 20V, VGS = ØV

– 0.5

–7

V

VDS = 20V, ID = 1 nA

– 10

Dynamic Electrical Characteristics Drain Source ON Resistance

rds(on)

25

Ω

ID = 1 mA, VGSS = ØV

f = 1 kHz

Input Capacitance

Ciss

12

pF

VDS = 20V, VGS = ØV

f = 1 MHz

Feedback Capacitance

Ciss

2.5

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Turn On Delay Time

td(on)

6

ns

Rise Time

tr

5

ns

Turn Off Delay Time

td(off)

50

ns

VDD = – 10V, ID = 10 mA RL = 10V, VGS(ON) = ØV VGS(OFF) = – 6V

1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375

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Databook.fxp 1/13/99 2:09 PM Page F-33

F-33

01/99

NJ132 Process

Silicon Junction Field-Effect Transistor

Drain Current as a Function of VDS

Gfs as a Function of VGS(OFF)

VGS(OFF) = Ð4.5 V

40

100 Transconductance in mS

Drain Current in mA

VGS = Ø V 80 VGS = –1 V 60 VGS = –2 V 40 VGS = –3 V 20 VGS = –4 V 5

10

15

10

0

–2

–4

–6

–8

Drain to Source Voltage in Volts

Gate Source Cutoff Voltage in Volts

Drain Saturation Current as a Function of VGS(OFF)

IDSS as a Function of RDS

150

60

100

50

50 40 30 20 10

0

–1

–2

–3

–4

–5

–6

0

–7

20

40

60

80

100

120

Drain Source Cutoff Voltage in Volts

Drain Saturation Current in mA

Input Capacitance as a Function of VGS

Feedback Capacitance as a Function of VGS

140

20 Feedback Capacitance in pF

20 Input Capacitance in pF

20

20

Drain Source Resistance in Ω

Drain Saturation Current in mA

0

30

VDS = Ø V

16

VDS = 15 V 12 8 4

0

–4

–8

– 12

– 16

Gate Source Voltage in Volts

– 20

16 12 8 VDS = Ø V 4

0

–4

–8

– 12

– 16

Gate Source Voltage in Volts

– 20