Control pin for Switch C. 7. VSS. â. Low Voltage Power Pin. 8. SIG C IN/OUT ... Exposure to absolute-maximum-rated conditions for extended periods may affect ...
CD4066B SCHS051G – NOVEMBER 1998 – REVISED JUNE 2017
CD4066B CMOS Quad Bilateral Switch 1 Features
3 Description
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The CD4066B device is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with the CD4016B device, but exhibits a much lower on-state resistance. In addition, the on-state resistance is relatively constant over the full signalinput range.
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15-V Digital or ±7.5-V Peak-to-Peak Switching 125-Ω Typical On-State Resistance for 15-V Operation Switch On-State Resistance Matched to Within 5 Ω Over 15-V Signal-Input Range On-State Resistance Flat Over Full Peak-to-Peak Signal Range High ON/OFF Output-Voltage Ratio: 80 dB Typical at fis = 10 kHz, RL = 1 kΩ High Degree of Linearity:
(DS14C89A) versus 26 mA (DS1489A). The DS14C89A provides on chip noise filtering which elimi- nates the need for external response control filter capacitors ...
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n Hand-held Analytic Instruments n Medical ...... s Registered or combinatorial operation s Registers .... combinatorial is selected, the output will be a function of.
n Meets EIA-232D and CCITT V.28 standards n LOW power ... Order Number DS14C88N, or DS14C88M. See NS Package ... If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/. Distributors for ... â65
the compiler to efficiently access memory by restricting the global data space ...... âgs. âms assume all memory is accessible when optimiz- ing. âgsrev#.
Reference Design Cookbook for Power Management Products ... TI hopes that this Cookbook will help to simplify and streamline your power .... Description.
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System Structure. 4 ..... throughput by the CPU through data organization. With the ... the DMA structure, and should be used in conjunction with this document.
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Oct 10, 1997 - The MOC304_ Series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a mono- lithic silicon ...