BF988 Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.
Applications Input- and mixer stages especially VHF- and UHF- tuners.
Features D D D D
D High AGC-range D Low feedback capacitance D Low input capacitance
Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3
G2
D
4 2
G1
94 9307
96 12647
1
BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2
S
12623
Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range
Test Conditions
Type
Tamb ≤ 60 °C
Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150
Unit V mA mA mW °C °C
Symbol RthChA
Unit K/W
Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu
Document Number 85007 Rev. 4, 08-Jul-99
Value 450
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BF988 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current
Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V
Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA
Type
BF988 BF988A BF988B
Symbol V(BR)DS
Min 12
±V(BR)G1SS ±V(BR)G2SS
Max
Unit V
7
14
V
7
14
V
±IG1SS
50
nA
±IG2SS
50
nA
–VG1S(OFF)
18 10.5 18 2.5
mA mA mA V
–VG2S(OFF)
2.0
V
Max
Unit mS pF pF fF pF dB
IDSS IDSS IDSS
Typ
4 4 9.5
Electrical AC Characteristics VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain
AGC range Noise figure
Test Conditions
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG2S = 4 to –2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
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Type
Symbol y21s Cissg1 Cissg2 Crss Coss Gps
Min 21
Typ 24 2.1 1.2 25 1.05 28
Gps
16.5
DGps
40
20
2.5
dB dB
F
1
dB
F
1.5
dB
Document Number 85007 Rev. 4, 08-Jul-99
BF988 Vishay Telefunken Common Source S–Parameters VDS , = 8 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified
ID/mA
5
10
15
f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 3000 400 500 600 700 800 900 1000 1100 1200 1300
Document Number 85007 Rev. 4, 08-Jul-99
S11 LOG MAG dB –0.02 –0.10 –0.31 –0.56 –0.87 –1.26 –1.59 –2.04 –2.42 –2.88 –3.39 –3.94 –4.46 –0.02 –0.11 –0.35 –0.62 –0.97 –1.39 –1.76 –2.25 –2.67 –3.16 –3.72 –4.30 –4.87 –0.01 –0.13 –0.37 –0.66 –1.02 –1.47 –1.85 –2.36 –2.80 –3.30 3.89 –4.49 –5.06
ANG deg –7.8 –15.3 –22.8 –30.2 –37.3 –44.3 –50.9 –58.0 –64.4 –71.4 –78.3 –85.2 –91.8 –8.3 –16.1 –24.0 –31.6 –39.2 –46.4 –53.2 –60.3 –67.1 –74.1 –81.1 –88.0 –94.4 –8.4 –16.4 –24.5 –32.3 –39.8 –47.0 –54.1 –61.3 –67.9 –75.0 –82.0 –88.8 –95.2
S21 LOG MAG dB 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30
ANG deg 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9
S12 LOG MAG dB –56.27 –50.61 –47.70 –46.19 –45.46 –45.84 –47.31 –48.19 –50.37 –49.48 47.92 –44.65 –41.76 –55.67 –50.01 –47.20 –45.60 –44.88 –45.25 –46.51 –47.19 –49.28 –48.99 –48.03 –45.15 –42.46 –55.26 –49.61 –46.70 –45.10 –44.38 –44.65 –45.72 –46.29 –48.18 –48.49 –47.93 –45.75 –43.05
ANG deg 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.0 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4
S22 LOG MAG dB –0.02 –0.06 –0.13 –0.20 –0.28 –0.36 –0.43 –0.49 –0.52 –0.54 –0.66 –0.66 –0.66 –0.04 –0.09 –0.16 –0.23 –0.31 –0.42 –0.48 –0.55 –0.58 –0.60 –0.73 –0.73 –0.73 –0.07 –0.12 –0.20 –0.27 –0.36 –0.47 –0.53 –0.61 –0.64 –0.66 ––0.77 –0.79 –0.79
ANG deg –3.6 –7.3 –10.6 –14.2 –17.5 20.5 –23.8 –26.8 –30.2 –33.4 –36.8 –40.1 –43.9 –3.7 –7.4 –10.8 –14.3 17.9 –20.9 –24.1 –27.3 –30.6 –33.8 –37.2 –40.6 –44.3 –3.7 –7.5 –11.0 –14.4 –18.0 –20.9 –24.2 –27.4 –30.6 –33.9 –37.3 –40.8 –44.5
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BF988 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 200 150 100 50
0
20
40
60
80
1V
12 8 0 4 0 –0.6
100 120 140 160
Tamb – Ambient Temperature ( °C )
–0.2
0.2
0.6
1.0
1.4
VG2S – Gate 2 Source Voltage ( V )
12817
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
30 C issg1 – Gate 1 Input Capacitance ( pF )
2.8 VG1S= 0.6V
VG2S= 4V
25 ID – Drain Current ( mA )
16
VG1S= –1V
96 12159
20
0.4V
15
0.2V
10
0 –0.2V
5
–0.4V 0 0
2
4
6
8
10
VDS – Drain Source Voltage ( V )
12812
VDS=8V VG2S=4V f=1MHz
2.0 1.6 1.2 0.8 0.4 0 –2
–1.5 –1.0 –0.5
0.0
0.5
1.0
1.5
VG1S – Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
20
2.8
16
3V 2V
6V
C issg2 – Gate 2 Input Capacitance ( pF )
VDS= 8V
5V 1V
4V 12 8
0
4 0 –0.8
2.4
12813
Figure 2. Drain Current vs. Drain Source Voltage
ID – Drain Current ( mA )
3V 2V
5V
VDS= 8V
0
12816
4V
20 ID – Drain Current ( mA )
P tot – Total Power Dissipation ( mW )
300
VG2S=–1V –0.4
0.0
0.4
0.8
1.2
VG1S – Gate 1 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
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12814
2.4 2.0
VDS=8V VG1S=0 f=1MHz
1.6 1.2 0.8 0.4 0 –1
0
1
2
3
4
5
VG2S – Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Document Number 85007 Rev. 4, 08-Jul-99
BF988 Vishay Telefunken 20
3.2
16 14
2.4 1.6 0.8
4
6
8
10
6
12
VDS – Drain Source Voltage ( V )
10 0
Im ( y21) ( mS )
–30
2
–0.4V
0.5
1.0
12
14
–10
f=100MHz
ID=5mA
–15
10mA
–20
400MHz
20mA 700MHz
–25
1000MHz
–35
1.5
VG1S – Gate 1 Source Voltage ( V )
1300MHz 0
4
8
12
16
20
24
28
32
Re (y21) ( mS )
12821
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
Figure 11. Short Circuit Forward Transfer Admittance
32
9 VG2S=4V
VDS=8V f=1MHz
24
7 Im ( y22) ( mS )
3V
16 2V
12
f=1300MHz
8
20
8
6
1000MHz
5 700MHz
4 3
1V
VDS=15V VG2S=4V ID=10mA f=100...1300MHz
400MHz
2
4
1
100MHz
0 0 0
10
VDS=8V VG2S=4V f=100...1300MHz
–40 0.0
8
–30
VG2S=–0.8V
–0.5
6
Figure 10. Short Circuit Input Admittance
–5
–0.2V
28
4
Re (y11) ( mS )
0
–20
–40
2
5
0
12818
100MHz 0
1V
–10
–50 –1
VDS=8V VG2S=4V ID=10mA f=100...1300MHz
400MHz
12820
4V 3V 2V
f= 800MHz – Transducer Gain ( dB )
700MHz
8
0
Figure 7. Output Capacitance vs. Drain Source Voltage
S 21
10
2
12815
y21s – Forward Transadmittance ( mS )
1000MHz
12
4
0 2
12819
f=1300MHz
18
VG2S=4V VG1S=0 f=1MHz Im ( y11 ) ( mS )
C oss – Output Capacitance ( pF )
4.0
0 4
8
12
16
20
24
28
ID – Drain Current ( mA )
Figure 9. Forward Transadmittance vs. Drain Current
Document Number 85007 Rev. 4, 08-Jul-99
0 12822
0.25
0.50
0.75
1.00
1.25
1.50
Re (y22) ( mS )
Figure 12. Short Circuit Output Admittance
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BF988 Vishay Telefunken VDS = 8 V, ID = 10 mA, VG2S = 4 V , Z0 = 50 W S12
S11 j
90° 120°
j0.5
60°
j2 150°
j0.2
0
j5
ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ 0.2
0.5
1
2
1300MHz
1
5
1000
30°
300
100 180°
0.04
0.08
0°
100
–j0.2
–j5
1300MHz
–150°
1000 –j0.5
–30°
–j2 –120° –j
12 960
–60° –90°
12 961
Figure 13. Input reflection coefficient
Figure 15. Reverse transmission coefficient
S21
S22 j
90° 120°
60° 700
j0.5
1000
400 150°
j2
30° j0.2
1300MHz
j5
ÁÁÁÁ ÁÁÁÁÁÁ
100 180°
1
2
0°
0
0.2
0.5
1
2
5
100
–j0.2 –150°
1
–j5
–30° 1300MHz –j0.5 –120°
12 962
–j2
–60° –90°
Figure 14. Forward transmission coefficient
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12 963
–j
Figure 16. Output reflection coefficient
Document Number 85007 Rev. 4, 08-Jul-99
BF988 Vishay Telefunken Dimensions in mm
96 12242
Document Number 85007 Rev. 4, 08-Jul-99
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BF988 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85007 Rev. 4, 08-Jul-99
