BC546 thru BC548 Small Signal Transistors (NPN)

TO-226AA (TO-92)

Features • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. As complementary types the PNP transistors BC556...BC558 are recommended. • On special request, these transistors are also manufactured in the pin configuration TO-18.

0.142 (3.6)

min. 0.492 (12.5) 0.181 (4.6)

0.181 (4.6)

Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

Bottom View

Maximum Ratings & Thermal Characteristics Parameter

Ratings at 25°C ambient temperature unless otherwise specified.

Symbol

Value

Unit

Collector-Base Voltage

BC546 BC547 BC548

VCBO

80 50 30

V

Collector-Emitter Voltage

BC546 BC547 BC548

VCES

80 50 30

V

Collector-Emitter Voltage

BC546 BC547 BC548

VCEO

65 45 30

V

BC546, BC547 BC548

VEBO

6 5

V

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

200

mA

Peak Emitter Current

-IEM

200

mA

Emitter-Base Voltage Collector Current

Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air

Ptot RΘJA

(1)

mW

(1)

°C/W

500 250

Junction Temperature

Tj

150

°C

Storage Temperature Range

TS

–65 to +150

°C

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

1/24/01

BC546 thru BC548 Small Signal Transistors (NPN)

Electrical Characteristics (T Parameter Current gain group

Small Signal Current Gain Current gain group

Input Impedance Current gain group

Output Admittance Current gain group

Reverse Voltage Transfer Ratio Current gain group

Current gain group

DC Current Gain Current gain group

J

= 25°C unless otherwise noted)

Symbol

Test Condition

Min

Typ

Max

Unit

A B C

hfe

VCE = 5 V, IC = 2 mA, f = 1 kHz

— — —

220 330 600

— — —

—

A B C

hie

VCE = 5 V, IC = 2 mA, f = 1 kHz

1.6 3.2 6

2.7 4.5 8.7

4.5 8.5 15

kΩ

A B C

hoe

VCE = 5 V, IC = 2 mA, f = 1kHz

— — —

18 30 60

30 60 110

µS

hre

VCE = 5 V, IC = 2 mA, f = 1kHz

— — —

1.5 • 10-4 2 • 10-4 3 • 10-4

— — —

—

VCE = 5 V, IC = 10 µA

— — —

90 150 270

— — —

VCE = 5 V, IC = 2 mA

110 200 420

180 290 500

220 450 800

VCE = 5 V, IC = 100 mA

— — —

120 200 400

— — —

A B C A B C A B C

hFE

A B C

—

Collector Saturation Voltage

VCEsat

IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA

— —

80 200

200 600

mV

Base Saturation Voltage

VBEsat

IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA

— —

700 900

— —

mV

VBE

VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA

580 —

660 —

700 720

mV

VCE = 80 V VCE = 50 V VCE = 30 V VCE = 80 V, Tj = 125°C VCE = 50 V, Tj = 125°C VCE = 30 V, Tj = 125°C

— — — — — —

0.2 0.2 0.2 — — —

15 15 15 4 4 4

nA nA nA µA µA µA

fT

VCE = 5 V, IC = 10 mA, f = 100 MHz

—

300

—

MHz

Collector-Base Capacitance

CCBO

VCB = 10 V, f = 1 MHz

—

3.5

6

pF

Emitter-Base Capacitance

CEBO

VEB = 0.5 V, f = 1 MHz

—

9

—

pF

F

VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz

—

2

10

dB

Base-Emitter Voltage

Collector-Emitter Cutoff Current

BC546 BC547 BC548 BC546 BC547 BC548

Gain-Bandwidth Product

Noise Figure

BC546, BC547 BC548

ICES

BC546 thru BC548 Small Signal Transistors (NPN) Ratings and Characteristic Curves (T

A

= 25°C unless otherwise noted)

BC546 thru BC548 Small Signal Transistors (NPN) Ratings and Characteristic Curves (T

A

= 25°C unless otherwise noted)

BC546 thru BC548 Small Signal Transistors (NPN) Ratings and Characteristic Curves (T

A

= 25°C unless otherwise noted)