HCF4025B TRIPLE 3-INPUT NOR GATE ■
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PROPAGATION DELAY TIME : tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DESCRIPTION The HCF4025B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4025B TRIPLE 3-INPUT NOR GATE provides the system designer with direct
DIP
SOP
ORDER CODES PACKAGE
TUBE
T&R
DIP SOP
HCF4025BEY HCF4025BM1
HCF4025M013TR
implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.
PIN CONNECTION
September 2001
1/7
HCF4025B INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION PIN No
SYMBOL
NAME AND FUNCTION
1, 2, 3, 4, 5, A, B, D, E, F, Data Inputs 8, 11, 12, 13 C, I, H, G 6, 9, 10 K, J, L Data Outputs V Negative Supply Voltage 7 SS VDD
14
Positive Supply Voltage
TRUTH TABLE INPUTS
LOGIC DIAGRAM
OUTPUTS
A, D, I
B, E, H
C, F, G
K, J, L
L L H H
L H L H
L H L H
H L L L
X = Don’t care
ABSOLUTE MAXIMUM RATINGS Symbol VDD
Parameter Supply Voltage
VI
DC Input Voltage
II
DC Input Current
PD
Value
Unit
-0.5 to +22
V
-0.5 to VDD + 0.5 ± 10
V mA
200 100
mW mW
Top
Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS Symbol VDD
2/7
Parameter Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
HCF4025B DC SPECIFICATIONS Test Condition Symbol
IL
VOH
VOL
VIH
VIL
IOH
IOL
II CI
Parameter
Quiescent Current
High Level Output Voltage Low Level Output Voltage
VI (V)
Low Level Input Voltage
Output Sink Current Input Leakage Current Input Capacitance
|IO| VDD (µA) (V)
0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0
High Level Input Voltage
Output Drive Current
VO (V)
0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18
Value
0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5
