toshiba - F1CHF

♢The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...
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TOSHIBA

MICROWAVE POWER GaAs FET

TIM1011-2L

MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES

HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „

„

BROAD BAND INTERNALLY MATCHED

„

HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB

SYMBOL

CONDITION

P1dB

MIN. TYP. MAX. UNIT 32.5

33.5



dBm

6.5

7.5



dB

Compression Point Power Gain at 1dB

G1dB

VDS= 9V

f =10.7-11.7GHz

Compression Point Drain Current

IDS1



0.85

1.1

A

Power Added Efficiency

ηadd



24



%

3rd Order Intermodulation

IM3

-42

-45



dBc

Two Tone Test

Distortion

P=22dBm

Drain Current

IDS2

(Single Carrier Level)



0.85

1.1

A

Channel Temperature Rise

∆Tch

VDS X IDS X Rth(c-c)





80

°C

ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance

Saturated Drain Current

IDSS

Gate-Source Breakdown Voltage

VGSO

CONDITION VDS= 3V IDS=1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -30µA

Rth(c-c)

Channel to Case

Pinch-off Voltage

Thermal Resistance

SYMBOL

gm VGSoff

MIN. TYP. MAX. UNIT  600  mS -2.0

-3.5

-5.0

V



2.0

2.6

A

-5





V



5.0

6.0

°C/W

♦The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

TOSHIBA CORPORATION Apr. 2000

TIM1011-2L

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDS

15

V

Gate-Source Voltage

VGS

-5

V

Drain Current

IDS

2.6

A

Total Power Dissipation (Tc= 25 °C)

PT

15

W

Channel Temperature

Tch

175

°C

Storage

Tstg

-65 ∼ +175

°C

c

d

0.5± ±0.15

3.2MAX

0.2MAX

8.5 MAX.

1.2± ±0.3 1.8± ±0.3

+0.1

13.0± ±0.3 17.0 MAX.

0.1 -0.05

e

cGate dSource eDrain

2.0MIN

2.5± ±0.3

d

Unit : mm

9.7± ±0.3

4-R2.4

2.0MIN.

PACKAGE OUTLINE (2-9D1B)

HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260° 260°C.

2

TIM1011-2L

Output Power vs. Frequency 37 VDS = 9 V IDS ≅ 0.85A

35

Pin = 26 dBm

34 33 32 31 9.7

10.2

10.7

11.2 11.7 Frequency (GHz)

12.2

12.7

Output Power vs. Input Power 36

90 f = 11.7 GHz

80

VDS = 9V IDS ≅ 0.85 A

34

70

33

60

32

50

31

40

30

30

29

20

28

10

27

0 20

22

24 26 Pin (dBm)

3

28

30

ηadd (%)

35

Po (dBm)

Po (dBm)

36

TIM1011-2L

P O W E R D I S S IP A TI O N V S . C A S E T E M P E R A T U R E 25

20

P T (W)

15

10

5

0 0

40

80

120

160

200

T c (℃ )

OUTPUT POWERCHARACTERISTICS CHARACTERISTICS CHARACTERISTIC IM3IM3 vs.vs. OUTPUT POWER -10 f = 11.7 GHz VDS = 9 V IDS ≅ 1.0 A ∆f= 5MHz

IM3 (dBc)

-20

-30

-40

-50

-60 17

19

21 23 25 Po (dBm), Single Carrie Po(dBm), Single Carrier 4

27

29

TIM1011-2L

TIM11011-2L S-PARAMETERS (MAGN. and ANGLES)

VDS=9V, IDS=1.0A f=10.4 – 13.2GHz

FREQUENCY

S11

S21

S12

S22

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

10.4

0.76

148

2.49

-85

0.066

-139

0.55

121

10.8

0.54

110

2.98

-131

0.110

176

0.46

62

11.2

0.25

50

3.12

180

0.145

129

0.38

-9

11.6

0.16

-63

2.84

132

0.153

84

0.36

-67

12.0

0.26

-123

2.55

89

0.155

43

0.37

-103

12.4

0.30

-164

2.37

46

0.158

3

0.34

-130

12.8

0.34

142

2.30

-1

0.164

-42

0.22

-146

13.2

0.49

58

2.05

-61

0.154

-100

0.18

-48

5