SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor
Product Summary
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
VDS
55
RDS(on) max. SMD version
4.8
m
ID
80
A
P- TO263 -3-2
Type
Package
Ordering Code
SPP80N06S2-05
P- TO220 -3-1 Q67040-S4245
2N0605
SPB80N06S2-05
P- TO263 -3-2 Q67040-S4255
2N0605
V
P- TO220 -3-1
Marking
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Continuous drain current 1)
ID
Value
Unit A
TC=25°C
80
TC=100°C
80 ID puls
320
EAS
810
Repetitive avalanche energy, limited by Tjmax 2)
EAR
30
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
300
W
-55... +175
°C
Pulsed drain current TC=25°C
Avalanche energy, single pulse ID =80 A , VDD =25V, RGS =25
mJ
kV/µs
IS =80A, VDS =44V, di/dt=200A/µs, Tjmax =175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
55/175/56
IEC climatic category; DIN IEC 68-1
Page 1
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 Thermal Characteristics Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics Thermal resistance, junction - case
RthJC
-
0.3
0.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA -
-
62
-
-
40
@ min. footprint @ 6 cm 2 cooling area
3)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
55
-
-
VGS(th)
2.1
3
4
Static Characteristics Drain-source breakdown voltage
V
VGS =0V, ID =1mA
Gate threshold voltage, VGS = VDS ID =250µA
Zero gate voltage drain current
µA
IDSS
VDS =55V, VGS =0V, Tj=25°C
-
0.01
1
VDS =55V, VGS =0V, Tj=125°C
-
1
100
-
1
100
Gate-source leakage current
IGSS
VGS =20V, VDS=0V
Drain-source on-state resistance4)
nA m
RDS(on)
VGS =10V, ID =80A
-
4.1
5.1
VGS =10V, ID =80A, SMD version
-
3.8
4.8
1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry ID = 170A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 Electrical Characteristics Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
66
132
-
Dynamic Characteristics Transconductance
gfs
V DS2*ID*R DS(on)max,
S
ID=80A
Input capacitance
Ciss
V GS=0V, VDS=25V,
-
5110
6790 pF
Output capacitance
Coss
f=1MHz
-
1330
1760
Reverse transfer capacitance
Crss
-
280
430
Turn-on delay time
td(on)
V DD=30V, V GS=10V,
-
18
27
Rise time
tr
ID=80A,
-
21
31
Turn-off delay time
td(off)
-
54
80
Fall time
tf
-
20
30
-
27
36
-
53
80
-
130
170
V(plateau) V DD=44V, I D=80A
-
5.2
-
V
IS
-
-
80
A
-
-
320
R G=2.2
ns
Gate Charge Characteristics Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
V DD=44V, I D=80A
V DD=44V, I D=80A,
nC
V GS=0 to 10V
Gate plateau voltage Reverse Diode Inverse diode continuous
TC=25°C
forward current Inv. diode direct current, pulsed
I SM
Inverse diode forward voltage
VSD
V GS=0V, IF=80A
-
0.9
1.3
V
Reverse recovery time
t rr
V R=30V, IF=lS,
-
60
75
ns
Reverse recovery charge
Q rr
diF/dt=100A/µs
-
130
160
nC
Page 3
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
320
parameter: VGS 10 V
SPP80N06S2-05
90
A
W
70
240
60 200
ID
Ptot
SPP80N06S2-05
50 160 40 120 30 80
20
40
0 0
10
20
40
60
80
0 0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
10
3 SPP80N06S2-05
10 1
SPP80N06S2-05
K/W A
tp = 26.0µs
100 µs
R
ID
DS (
on )
10 2
Z thJC
=
V
DS
/I
D
10 0
10 -1
10 -2
D = 0.50
1 ms
0.20 10
10 ms
1
10
0.10
-3
0.05 DC
10 0 -1 10
10
0
10
1
V
0.02
10
2
10 -4
single pulse
10 -5 -7 10
10
-6
10
-5
0.01
10
-4
10
-3
10
-2
s
10
0
tp
VDS Page 4
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
A
SPP80N06S2-05
17
Ptot = 300W f
e
VGS [V] a 4.5
160 140
ID
SPP80N06S2-05
m
h g
i
120
d
100 c
80
b
5.0
c
5.3
d
5.5
e
5.8
f
6.0
g
6.8
h
9.3
i
10.0
e
14 f
RDS(on)
190
12 10 g
8
h
6
60 b
2
20 a
0 0
i
4
40
0.5
1
1.5
2
2.5
3
3.5
V
4
0 0
5
VGS [V] = e f 5.8 6.0
g 6.8
20
h i 9.3 10.0
40
60
80
100
A
140
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs
gfs = f(ID ); Tj=25°C parameter: gfs
160
170
S
A
140 120
g fs
ID
120 100
100
80
80
60
60
40
40
20
20
0 0
1
2
3
4
0 0
6
VGS V
Page 5
20
40
60
80 100 120 140 160
A 200 ID
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
parameter: VGS = VDS
17
SPP80N06S2-05
4
m
V
V GS(th)
RDS(on)
14 12 10
250 µA
2.5
2
8 98%
6
1.5 typ
4
1
0.5
2 0 -60
1.25 mA
3
-20
20
60
100
140
°C
0 -60
200
-20
20
60
100
°C
180
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
I F = f (VSD)
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
5
10 3
pF
SPP80N06S2-05
A
10 4
10 2
IF
C
Ciss
Coss 10 3
10 1 Tj = 25 °C typ
Crss
Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%)
10 2 0
5
10
15
20
30
V VDS
10 0 0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD Page 6
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
VGS = f (Q Gate) parameter: ID = 80 A pulsed
par.: ID = 80 A , VDD = 25 V, RGS = 25
16
900
mJ
V
700
12
VGS
E AS
SPP80N06S2-05
600
0,2 VDS max
10
0,8 VDS max
500 8 400 6 300 4
200
2
100 0 25
45
65
85
105
125
145
°C 185 Tj
0 0
20
40
60
80 100 120 140 160 nC
200
QGate
15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 66
SPP80N06S2-05
V (BR)DSS
V
62
60
58
56
54
52
50 -60
-20
20
60
100
140
°C
200
Tj Page 7
2002-06-10
SPP80N06S2-05 SPB80N06S2-05 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-05, BSPB80N06S2-05 and BSPI80N06S2-05, for simplicity the device is referred to by the term SPP80N06S2-05, SPB80N06S2-05 and SPI80N06S2-05 throughout this documentation
Page 8
2002-06-10
