MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION

OUTLINE DRAWING

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

3.2+/-0.4

9.1+/-0.7

12.3MIN

APPLICATION

2 9+/-0.4

•High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz

3.6+/-0.2

4.8MAX

12.3+/-0.6

FEATURES

1.3+/-0.4

1.2+/-0.4 0.8+0.10/-0.15

1 2 3

For output stage of high power amplifiers in HF band mobile radio sets.

0.5+0.10/-0.15

3.1+/-0.6

5deg

4.5+/-0.5

2.5 2.5

9.5MAX

PIN 1.Gate 2.Source 3.Drain UNIT:mm

ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c

PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain to source current Channel temperature Storage temperature Thermal resistance

CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case

RATINGS UNIT 50 V +/- 20 V 56.8 W 0.8 W 5 A °C 150 -40 to +150 °C °C/W 2.2

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD

PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance

(Tc=25°C , UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.4W, f=30MHz, Idq=0.5A VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase)

MIN 1.7 16 55

LIMITS TYP MAX. 10 1 4.7 19 65 No destroy

UNIT uA uA V W % -

Note : Above parameters , ratings , limits and conditions are subject to change.

RD16HHF1

MITSUBISHI ELECTRIC 1/7

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS

Vgs-Ids CHARACTERISTICS 10 Vds=10V Ta=+25°C

8

60

6

Ids(A)

CHANNEL DISSIPATION Pch(W)

80

CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE

40

4

20

2 0

0

0

0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C)

2

4 6 Vgs(V)

8

10

Vds VS. Ciss CHARACTERISTICS

Vds-Ids CHARACTERISTICS 8

60 Vgs=10V

Ta=+25°C

50 Vgs=9V

6

Ciss(pF)

Ids(A)

40 Vgs=8V

4 Vgs=7V

2

Vgs=6V

0

2

4 6 Vds(V)

8

0 0

10

10

30

Vds VS. Crss CHARACTERISTICS

100

10

Ta=+25°C Ta=+25°C 80 f=1MHz f=1MHz

Ta=+25°C f=1MHz

Ta=+25°C f=1MHz

8 Crss(pF)

60 40

6 4 2

20

0

0 0

10

20

0

30

Vds(V)

RD16HHF1

20 Vds(V)

Vds VS. Coss CHARACTERISTICS

Coss(pF)

Ta=+25°C f=1MHz

20 10

Vgs=5V

0

30

10

20

30

Vds(V)

MITSUBISHI ELECTRIC 2/7

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS

80

20

100

ηｄ

Gp

60

30

40

20 10

Po

15

5

Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A

-10

0

10 Pin(dBm)

20

0

0

Vdd-Po CHARACTERISTICS

0.6

0.8

+25°C -25°C

4

10

2

5

1

0

0 8 10 Vdd(V)

12

Ids(A)

3

Idd

6

Vds=10V Tc=-25~+75°C

6

Po

15

4

RD16HHF1

5

Idd(A)

Po(W)

20

0.4 Pin(W)

8

6 Ta=25°C f=30MHz Pin=0.4W Idq=0.5A Zg=ZI=50 ohm

0.2

Vgs-Ids CHARACTERISTICS 2

30 25

20 0

0.0

30

40

Idd

Ｉｄｄ

0

60

ηd

10

20

80 ηd(%)

40

25

Po

Pout(W) Idd(A)

Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A

Pin-Po CHARACTERISTICS 100

ηd(%)

Po(dBm) , Gp(dB),Idd(A)

50

4

+75°C

2

0 2

14

MITSUBISHI ELECTRIC 3/7

4

6 Vgs(V)

8

10

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W TEST CIRCUIT(f=30MHz)

V gg

V dd

C1

330uF,50V

L2 8.2K ohm

220pF 68pF

C1 10uF,50V *3pcs C1

100pF 1K ohm

C2

C1

88pF

L1 RD 16HHF1

C2

L3

RF-IN

RF-OUT L4

1 ohm 220pF

20pF

82pF

L5

100pF

100pF

200pF

200pF

1.5

5

15

15 65

34 41 43 45

75 85 90

67

100

91 100

C 1:100pF,0.022uF,0.1uF in parallel C 2:470pF*2 in parallel L1:10Turns,I.D 8mm,D 0.9mm copper wire L2:10Turns,I.D 6mm,D 1.6mm silver plateted copper wire L3:9Turns,I.D 5.6mm,D 0.9mm copper wire L4:4Turns,I.D 5.6mm,D 0.9mm,P =0.5mm copper wire L5:5Turns,I.D 5.6mm,D 0.9mm,P =1mm copper wire

D imensions:mm Note:B oard material-teflon substrate micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm

/

RD16HHF1

MITSUBISHI ELECTRIC 4/7

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

Zo=50Ω

f=30MHz Zout

f=30MHz Zin

Zin , Zout

RD16HHF1

f

Zin

Zout

(MHz)

(ohm)

(ohm)

Conditions

30

20.02-j89.42

2.99-j3.66

Po=20W, Vdd=12.5V,Pin=0.4W

MITSUBISHI ELECTRIC 5/7

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE

RD16HHF1

OBSERVE HANDLING PRECAUTIONS

Silicon MOSFET Power Transistor 30MHz,16W

RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000

RD16HHF1

S11 (mag) 0.928 0.761 0.676 0.650 0.679 0.709 0.742 0.775 0.801 0.826 0.844 0.861 0.874 0.884 0.892 0.900 0.903 0.908 0.912 0.912 0.913 0.913

(ang) -43.2 -96.8 -121.9 -145.8 -156.4 -162.7 -168.0 -173.0 -177.7 177.7 173.2 169.0 164.8 160.7 156.9 153.0 149.1 145.5 141.7 137.9 134.3 130.7

S21 (mag) (ang) 50.035 150.2 32.680 117.1 22.018 101.3 11.543 81.0 7.560 66.2 5.380 55.7 4.126 45.9 3.208 36.9 2.592 29.6 2.133 22.6 1.775 16.6 1.509 11.3 1.283 5.9 1.114 2.1 0.974 -1.9 0.855 -5.3 0.759 -8.4 0.678 -11.3 0.614 -13.5 0.559 -15.3 0.509 -17.3 0.467 -17.9

S12 (mag) 0.013 0.025 0.027 0.025 0.023 0.022 0.026 0.034 0.045 0.056 0.069 0.081 0.093 0.104 0.117 0.129 0.140 0.150 0.161 0.172 0.180 0.190

MITSUBISHI ELECTRIC 6/7

S22 (ang) 60.6 34.3 24.3 20.3 27.0 46.4 63.2 74.4 78.3 78.4 78.1 75.3 73.1 69.8 67.2 63.7 60.6 56.8 53.8 50.4 47.1 43.6

(mag) 0.705 0.588 0.540 0.543 0.586 0.633 0.698 0.727 0.769 0.805 0.822 0.851 0.867 0.877 0.894 0.897 0.904 0.914 0.915 0.917 0.922 0.920

(ang) -44.6 -92.6 -116.9 -138.4 -147.1 -153.2 -158.1 -163.2 -168.0 -172.8 -176.8 178.9 174.7 170.9 166.9 163.4 159.6 155.9 152.9 149.0 145.4 142.4

REV.6 7 APRIL. 2004

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

RD16HHF1

Silicon MOSFET Power Transistor 30MHz,16W

Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.

RD16HHF1

MITSUBISHI ELECTRIC 7/7

REV.6 7 APRIL. 2004