File under Discrete Semiconductors, SC14 ... application of gold sandwich ... Product and environmental safety - toxic materials ... persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety.
NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
4
fpage
1
3
2 Top view
It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
open base
−
18
V
−
300
mA
total power dissipation
up to Tc = 110 °C
−
4.5
W
fT
transition frequency
IC = 240 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C
4
−
GHz
Vo
output voltage
Ic = 240 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C
1.6
−
V
PL1
output power at 1 dB gain compression
Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C
28
−
dBm
ITO
third order intercept point
Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C
47
−
dBm
VCEO
collector-emitter voltage
IC
collector current
Ptot
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
18
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
300
mA
Ptot
total power dissipation
−
4.5
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tc = 110 °C
THERMAL RESISTANCE SYMBOL Rth j-c
September 1995
PARAMETER
THERMAL RESISTANCE
thermal resistance from junction to case
3
20 K/W
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL
PARAMETER
CONDITIONS IE = 0; VCB = 15 V
MIN.
TYP.
MAX.
UNIT
−
−
50
µA
ICBO
collector cut-off current
hFE
DC current gain
IC = 240 mA; VCE = 15 V
25
75
−
fT
transition frequency
IC = 240 mA; VCE = 15 V; f = 500 MHz
−
4
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 15 V; f = 1 MHz
−
3.8
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
20
−
pF
Cre
feedback capacitance
IC = 0; VCE = 15 V; f = 1 MHz
−
2.3
−
pF
Ccs
collector-stud capacitance
note 1
−
0.8
−
pF
GUM
maximum unilateral power gain (note 2)
IC = 240 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C
−
13
−
dB
Vo
output voltage
note 3
−
1.6
−
V
PL1
output power at 1 dB gain compression (see Fig.2)
IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; measured at f = 800 MHz
−
28
−
dBm
ITO
third order intercept point (see Fig.2)
note 4
−
47
−
dBm
Notes 1. Measured with emitter and base grounded. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and 2
S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 1 – S 11 22 3. dim = −60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 4. IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Pp = ITO − 6 dB; fp = 800 MHz; Pq = ITO − 6 dB; fq = 801 MHz; measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
2.2 nF
handbook, full pagewidth
2.2 nF
VCC
VBB L2
2.2 kΩ
2.2 nF 2.2 nF
L1 2.2 nF 75 Ω
4.7 Ω
75 Ω
180 Ω DUT 1.2 pF
1.2 pF 24 Ω
1.8 pF
24 Ω
0.68 pF MEA273
f = 40 to 860 MHz. L1 = L2 = 5 µH Ferroxcube choke.
Fig.2 Intermodulation distortion MATV test circuit.
MEA272
MBB361
6 handbook, halfpage
120
handbook, halfpage
fT (GHz)
h FE
80
4
40
2
0
0 0
40
80
120
160 I C (mA)
10
10 2
VCE = 10 V; Tj = 25 °C.
VCE = 15 V; f = 500 MHz; Tj = 25 °C
Fig.3
Fig.4
DC current gain as a function of collector current.
September 1995
5
I C (mA)
103
Transition frequency as a function of collector current.
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
MEA270
MEA271
40
6
handbook, halfpage
handbook, halfpage
gain (dB)
Cc (pF)
30 4
20
2 10
G UM Is 12 I
0 0
10
0 0.1
20
VCB (V)
Collector capacitance as a function of collector-base voltage.
MEA269
20 d im (dB) 30
40
50
60
70 100
200
I C (mA)
300
VCE = 15 V; Vo = 1.6 V; f(p+q−r) = 793.25 MHz.
Fig.7
Intermodulation distortion as a function of collector current.
September 1995
10
Fig.6 Gain as a function of frequency.
handbook, halfpage
0
f (GHz)
IC = 240 mA; VCE = 15 V; Tamb = 25 °C
IE = ie = 0; f = 1 MHz
Fig.5
1
2
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
1
handbook, full pagewidth
0.5
2
1200 MHz 0.2
1000 800
5 10
500
+j 0
0.2
0.5
1
2
5
10
∞
200
–j 10
100 40
0.2
5
2
0.5
MEA274
1 IC = 240 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60° 1200 MHz 1000
150°
30°
800 500 100 40
180°
+ϕ
200 0.05
0.1
0°
−ϕ
30°
150°
60°
120° IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
0.15
90°
MEA275
Fig.9 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
40
handbook, full pagewidth
90° 120°
60°
100
150°
30°
200
500 800 1000 1200 MHz 0.05
180°
ϕ 0.1
0.15
0°
ϕ
30°
150°
60°
120°
MEA277
90°
IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0 –j
0.2
0.5
1200 1000 800 500
1
200
2
5
10
∞ 10
100 5
0.2
40 MHz 2
0.5
IC = 240 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω.
1
MEA276
Fig.11 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
PACKAGE OUTLINE Studded ceramic package; 4 leads
SOT122A
D
A
ceramic BeO metal
Q
c N1 A
D1
w1 M A
D2
N
M
W
N3 M1
X
detail X
H b
α
4 L
3 H 1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT
A
b
c
D
D1
D2
H
L
M1
M
N
N1 max.
N3
Q
W
w1
α
mm
5.97 4.74
5.85 5.58
0.18 0.14
7.50 7.23
6.48 6.22
7.24 6.93
27.56 25.78
9.91 9.14
3.18 2.66
1.66 1.39
11.82 11.04
1.02
3.86 2.92
3.38 2.74
8-32 UNC
0.381
90°
OUTLINE VERSION
REFERENCES IEC
JEDEC
EIAJ
ISSUE DATE 97-04-18
SOT122A
September 1995
EUROPEAN PROJECTION
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
DEFINITIONS Data Sheet Status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Mar 4, 1997 - mA. Ptot total power dissipation. Tamb ⤠25 °C. â. â. 250. mW. hFE. DC current gain. IC = 10 mA; VCE = 1 V. 20. 80. â. fT transition frequency.
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