1030, av. des Jeux Olympiques 38100 Grenoble France Phone : +33 6 63 61 73 38 Email:
[email protected]
CALISTE Damien Marital status : single
Civil status
Nationality : French citizen Age : 29 years old Place of birth : Paris
Formation University degrees December 2005 PhD in physics, speciality in material sciences: “Multiscale simulations of defects diffusion in Si and SiGe”. Thesis directed by Dr. F. Lançon [Grenoble – France]. October 2002 engineer degree from l'École Centrale, one important scientific and technical French school [Lyon – France]. September 2002 a DEA degree (French equivalent to a master degree) in « condensed matter, surfaces and interfaces » from the University Claude Bernard [Lyon – France]. June 1997 Alevel.
Vocational training 2004 scientific matter : DFT (Density Functional Theory) physic school (1 week). 2004 industry matter : patents technics (1 week). 2002 computing matter : Python language (1 week) and OpenMP programming (1 week).
Languages
• English: spoken, written et read, corresponding to 620 points to the TOEFL. • German : notions.
Computing
• Programming : good skills in C/C++, JAVA and Fortran90, common usage of Bash/Python
scripts. Knowledge of OpenGL: had created a free software visualization program for atomic structures called V_Sim, http://wwwdrfmc.cea.fr/sp2m/L_Sim/V_Sim/index.en.html. • Internet technologies : knowledge of PHP, MYSQL/POSTGRESQL, HTML and XSL
transformation tools : had worked in a group to develop the students extranet from l'École Centrale de Lyon. • Operating systems : common usage and administration of Linux systems.
Personal interests
• Two participations to the French robot cup (called Coupe E=M6) in 2000 and 2001 : programming on microcontroller chips (PIC) and creations of decision algorithms and simulating tools. • Playing the viola in several amateur orchestras.
Occupational
qualification Current position from January 2007 Permanent position in the L_Sim laboratory in Dr. F. Lançon's team.
Research area January-December Post doctoral position in l'Université Catholique de Louvain (Belgium) in the team of Xavier 2006 Gonze (
[email protected]). This job is a part of an European project called BigDFT. It consists of integrating a wavelet based library computing electronic states into the code ABINIT, in relation with other node of the project: CEA Grenoble (France), Basel university (Switzerland) and Kiel university (Germany). 2003-2004 6 months in the University of Basel (Switzerland) with Pr. S. Goedecker (stefan.goedecker@u nibas.ch ) : using molecular dynamics with interatomic potentials to study diffusion of vacancy defects in Si and SiGe. 2002-2005 PhD thesis in Grenoble (France) ; about the study of defects in Si and SiGe via atomic calculations, investigating their stability (ab initio calculations within DFTLDA framework using CPMD software), their interactions (saddle points search with NEB algorithm) and their long range diffusion (developing an adapted Lattice Kinetic Monte Carlo program). April-August 2002 Master training, in the CEA in Grenoble (France) ; investigating Si, SiGe and SiGeC on perfect crystal lattice with ab initio calculations (ABINIT software) and Monte Carlo simulations.
Communications and published papers Comp. Phys. Com. « Sharing electronic structure and crystallographic data with ETSF_IO », D. Caliste, Y. 2008 Pouillon, M.J. Verstraete, V. Olevano, X. Gonze, Comp. Phys. Com. (2008). J. Chem. Phys. « Daubechies wavelets as a basis set for density functional pseudopotential 2008 calculations », L. Genovese, A. Neelov, S. Goedecker, T. Deutsch, S.A. Ghasemi, A. Willand, D. Caliste, O. Zilberberg, M. Rayson, A. Bergman et R. Schneider, J. Chem. Phys. (2008). Comp. Mat. Sc. « Specification of an extensible and portable file format for electronic structure and 2008 crystallographic data », X. Gonze, C.O. Almbladh, A. Cucca, D. Caliste, C. Freysoldt, M. Marques, V. Olevano, Y. Pouillon et M.J. Verstraete, Comp. Mat. Sc. (2008). Phys. Rev. B 2007 « Germanium diffusion mechanisms in silicon: a first principle study », D. Caliste, P. Pochet, T. Deutsch and F. Lançon, Phys. Rev. B (75), 125203 (2007). Phys. Rev. Lett. « Vacancyassisted diffusion in silicon: a three temperatures model », D. Caliste and 2006 P. Pochet, Phys. Rev. Lett. (97), 135901 (2006). Oral presentation in Lyon (France) for the meeting of the highperformance computing group (in 2005) : « A study of germanium diffusion in silicon : role of point defects ». Poster presentation in the GdRDFT 2005 (French working group on DFT). Oral presentation in the GdRDFT 2004 : « Atomistic simulations in Si and SiGeC, coupling ab initio and Monte Carlo methods ».
Teaching experiences Creation and teaching of practicals in physical simulations for students of master level, first year students (8h) et second year students (32h). Teaching of practicals of point mechanism for first year university students (45h).
Industry experience June-August 2001 Development of an HTML generating program in C++ and of a GUI of vector graphics in JAVA.