A Voltage Controlled Oscillator at 2.45 GHz using Si-MMIC ... - F6CSX
Discrete & RF Semiconductors. Semiconductor ... components, circuit layout and measured data of a VCO-circuit at 2.45 GHz using SIEMENS Si-MMIC BGV400. Basically we use a Colpitts-structured Oscillators for this design. This means that ...
A Voltage Controlled Oscillator at 2.45 GHz using Si-MMIC BGV400 This application note provides general information, print layout and list of used components, circuit layout and measured data of a VCO-circuit at 2.45 GHz using SIEMENS Si-MMIC BGV400. Basically we use a Colpitts-structured Oscillators for this design. This means that one capacitor is placed between base and emitter (C1) and between emitter and ground (C2) for feedback purposes. The output of the oscillator-transistor (Tr1) of our BGV400 is directly coupled (DC) to the second stage used as buffer amp (Tr2). To accomplish high isolationvalues we need an output at collector of the buffer amp (pin6, BGV400). Therefore this circuit provides good pulling and pushing factors. The circuit at a 3V supply-voltage offers around -2 dBm output power. This is sufficient for most of the applications. A very important parameter for oscillators is the phase noise at e.g. 10 kHz offset. This value shows typical 86 dBc/Hz at 10 kHz offset at 2.45 Ghz. Other parameters are shown on page 2. This design is only a first step, the element values are not optimized. C4
coax. Res.
Schematic
+Vc R1 C7
C3 BBY53
C8
C1
schematic BGV400
C5
IN
OutA BGV400
6,V+
C6
E1
Tr2
RFout
1,Out A
C2
3,IN
L2
Tr1
4,E1
L1 C9 C10
2,5,Ground
+V
The DC-voltage at pin E1 should have no higher value than 0.7V, otherwise a parasitic diode would begin to conduct and increase current consumption (see data sheet BGV400). The inductor L1 prevents rf-shortening at the output. This inductance can also be replaced for certain applications by a resistor. This is also true for L2.
Resistor R1 is used as blocking element for pin +Vc. A better solution could be an inductor e.g.100nH. In addition +Vc and +V should be kept isolated from disturbing signals, therefore a good rf-short must include also low frequencies. The oscillation frequency is tuned by a varactor diode BBY53-03W. Other designs are also possible e.g. with 2 diodes in series and in parallel to increase the frequency range. Furtheron other diodes from BBY5x-series and other coaxial resonators are fitting for other frequency bands.
typical data:
Control Voltage Pulling vswr=2 Pushing 2.8V±0.2V Phase noise at 10 kHz offset typ. Return Loss output Harmonics
Device Voltage 3.0 V Current 10 mA Pout typ. -2 dBm Frequency 2.42 GHz to 2.50 GHz
0.8 V to 4 V ± 2.7MHz ±400 kHz -86 dBc/Hz 10 dB -15dBc
Component List Componen t R1 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 L1 L2 D1 M1 Substrate Res
control voltage resistance feedback base-emitter feedback emitter-ground coupling from base to resonator coupling resonator to diode out A short output decoupling rf-short rf-short rf-short rf-short inductance for biasing inductance emitter to ground BBY53-03W MMIC BGV400 h=0.5mm; εr typ. 4.5 Coaxial Resonator Siemens B6940-H3707B310
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München
Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group.
The information describes the type of component and shall not be considered as assured characteristics.
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